? e96y23-te sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. absolute maximum ratings (ta=25 ?) optical power output p o 5mv reverse voltage v r ld 2 v pd 15 v operating temperature topr ?0 to +60 ? storage temperature tstg ?0 to +85 ? description the SLD104AV is a low noise gaalas laser diode developed for cd. features high temperature operation low noise small package ( f 5.6 mm) applications pickup for cd players structure gaalas double hetero structured laser diode pin photodiode for optical power output monitor gaalas laser diode m-260 SLD104AV connection diagram pin configuration pd ld 2 1 3 common 21 3 bottom view 1. ld anode 2. pd anode 3. common
? SLD104AV optical and electrical characteristics (t c =25 ?) t c : case temperature item threshold current operating current operating voltage oscillation wavelength monitor current parallel radiation angle perpendicular radiation angle parallel radiation angle symmetry perpendicular radiation angle accuracy positional accuracy differential efficiency astigmatism s/n ratio pd dark current pd capacitance between pins symbol ith iop vop l im q // q^ ? s r * 1 ? ? ^ ? x, ? y, ? z h d as s/n i d cr conditions (tc=25 ?) p o =3 mw p o =3 mw p o =3 mw p o =3 mw vr (pin)=5 v p o =3 mw p o =3 mw cw, p o =3 mw p o =3 mw p o =3 mw fc=720 khz ? f=30 khz p o =4 mw vr (pin)=5 v vr (pin)=5 v, f=1 mhz min. 1.7 760 0.08 9 20 0.2 ?4 typ. 45 52 1.9 780 0.15 18 35 0.45 ?7 88 max. 60 65 2.5 800 0.4 25 45 20 ? ?50 0.7 ?0 150 30 unit ma ma v nm ma deg deg % deg ? mw/ma ? db na pf *d s r power ? 0 7 s l s r q || d s r = s l + s r | s l ?s r |
? SLD104AV example of representative characteristics ?0 0 25 50 100 100 50 10 45 threshold current vs. temperature characteristics tc-case temperature (?) ith-threshold current (ma) far field pattern (ffp) ?0 ?0 0 20 40 1.0 relative radiant intensity 0.5 0 angle (degree) p o =3mw q // q^ pin diode voltage current characteristics 0.25 (ma) ?.25 0 ?.0 optical power output vs. forward current characteristics 20 40 60 80 100 5 p o -optical power output 0 i f -forward current (ma) 4 3 2 1 tc=25? tc=50? relative radiant intensity tc=25? p o =3mw 1.0 (v) i v relative radiant intensity vs. wavelength characteristics p o =3mw 778 779 780 781 782 l -wavelength (nm) relative radiant intensity relative radiant intensity vs. wavelength characteristics p o =5mw 780 781 782 783 784 l -wavelength (nm)
sony code eiaj code jedec code reference slot 1.0 0.5 0.4 90 reference plane 1 2 f 5.6 ?0.05 f 4.4 max f 3.7 max 0.25 * 1.26 0.5 min 2.6 max 1.2 0.1 6.5 3 ? f 0.45 pcd f 2.0 ld chip & photo diode * optical distance = 1.35 0.15 m-260 1 23 m-260 package weight 0.3g 0 3 package outline unit : mm SLD104AV ?
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